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| BC 556 ... BC 559 PNP Si-Epitaxial PlanarTransistors General Purpose Transistors PNP 500 mW TO-92 (10D3) 0.18 g Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) BC 556 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC Tj TS 65 V 80 V Grenzwerte (TA = 25/C) BC 557 45 V 50 V 5V 500 mW 1) 100 mA 150/C - 55...+ 150/C BC 558/559 30 V 30 V Characteristics (Tj = 25/C) Group A DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 5 V, - IC = 2 mA Small signal current gain Stromverstarkung Input impedance - Eingangsimpedanz Output admittance - Ausg.-Leitwert Reverse voltage transfer ratio Spannungsruckwirkung - IC = 100 mA, - IB = 5 mA hFE 110...220 Kennwerte (Tj = 25/C) Group B 200...460 Group C 420...800 h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz hfe hie hoe hre typ. 220 1.6...4.5 kS 18 < 30 :S typ.1.5 *10-4 typ. 330 3.2...8.5 kS 30 < 60 :S typ. 2 *10-4 typ. 600 6...15 kS 60 < 110 :S typ. 3 *10-4 Collector saturation voltage - Kollektor-Sattigungsspg. -VCEsat - - 300 mV 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 8 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung - IC = 100 mA, - IB = 5 mA Base-Emitter voltage - Basis-Emitter-Spannung - VCE = 5 V, - IC = 2 mA Collector-Emitter cutoff current - Kollektorreststrom - VCE = 60 V - VCE = 40 V - VCE = 25 V - VCE = 25 V BC 556 BC 557 BC 558 BC 559 - ICE0 - ICE0 - ICE0 - ICE0 fT CCB0 CEB0 BC 556... BC 558 BC 559 - - - - 150 MHz - - - VBE 580 mV - VBEsat - BC 556 ... BC 559 Kennwerte (Tj = 25/C) Typ. - 660 mV - - - - - - 9 pF Max. 1V 700 mV 0.1 :A 0.1 :A 0.1 :A 0.1 :A - 6 pF - Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 :A RG = 2 kS f = 1 kHz, F F - - RthA 2 dB 1 dB 10 dB 4 dB 200 K/W 1) BC 546 ... BC 549 Collector-Base Capacitance - Kollektor-Basis-Kapazitat )f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ BC 556A BC 557A BC 558A BC 556B BC 557B BC 558B BC 559B BC 557C BC 558C BC 559C 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 01.11.2003 9 |
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